Method for improving filling form of interlayer dielectric layer covering MIM capacitor

The invention provides a method for improving the filling form of an interlayer dielectric layer covering MIM capacitors, and the method comprises the steps: providing a substrate, and forming a plurality of MIM capacitors on the substrate; forming a buffer layer on the substrate to cover the MIM capacitor; and forming an interlayer dielectric layer on the substrate. According to the application, the interlayer dielectric layer covering the MIM capacitor is formed by depositing the buffer layer and then implementing the HDP process, so that the situations of holes, cracks and the like of the interlayer dielectric layer can be effectively prevented, and the filling form of the interlayer dielectric layer in the gap between the MIM capacitors and the corner of the boundary of the upper and lower electrodes of the MIM capacitors is remarkably improved. 本申请提供一种改善覆盖MIM电容的层间介质层填充形态的方法，包括：提供一衬底，在衬底上形成有多个MIM电容；在衬底上形成缓冲层，覆盖MIM电容；在衬底上形成层间介质层。根据本申请，通过先沉积缓冲层再实施HDP工艺的方式形成覆盖MIM电容的层间介质层，可以有效防止层间介质层出现孔洞、裂隙等情况，显著改善层间介质层在MIM电容