Method for preparing perovskite layer by anti-solvent method and perovskite photoelectric device

The invention discloses a method for preparing a perovskite layer by an anti-solvent method and a perovskite photoelectric device. The method comprises the following steps: providing a substrate and a perovskite precursor solution; coating an anti-solvent on the surface of the substrate to form a liquid film; and coating the liquid film with the perovskite precursor solution, and carrying out annealing treatment to form a perovskite layer. The perovskite photoelectric device comprises a hole transport layer, a perovskite layer and an electron transport layer which are sequentially stacked, wherein the perovskite layer is prepared by adopting the method. According to the method for preparing the perovskite layer by the anti-solvent method provided by the invention, crystals of the perovskite are gradually transited to the upper surface from the lower surface, so that holes are prevented from being formed in the bottom of the perovskite layer, the contact between the perovskite film and the substrate is improve