Semiconductor structure

The present disclosure describes a semiconductor structure. The semiconductor structure may include a substrate, a gate structure on the substrate, a dielectric material layer on the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductive layer on and in contact with the source/drain (S/D) contact layer. The source/drain (S/D) contact layer may include a platinum group metal material layer and a silicide layer formed between the substrate and the platinum group metal material layer. A top width of the top of the platinum group metal material layer may be greater than or substantially equal to a bottom width of the bottom of the platinum group metal material layer. 本公开说明了一种半导体结构。半导体结构可包括一基底，位于基底上的一栅极结构，位于栅极结构上的一介电材料层，穿过栅极结构形成并与之相邻的一源极/漏极(S/D)接触层，以及位于源极/漏极(S/D)接触层上并与之接触的一沟槽导电层。源极/漏极(S/D)接触层可包括铂族金属材料层及形成于基底与铂族金属材料层之间的一硅化层。铂族金属材料层顶部的一顶部宽度可大于或实质上等于铂族金属材料层底部的底部宽度。