Semiconductor device

The embodiment of the invention provides a semiconductor device. The conductive structure is reduced in height and increased in width. In particular, a sacrificial self-aligned contact layer and a sacrificial metal contact etch stop layer are used to form a reduced resistance conductive structure. After the conductive structure is formed, the sacrificial self-aligned contact layer and the sacrificial metal contact etch stop layer are removed and replaced with a low dielectric constant material to reduce capacitance in the device. Therefore, the efficiency of the device can be improved. 本发明实施例提供一种半导体装置。其导电结构的高度减少且宽度增加。具体而言，牺牲自对准接点层与牺牲金属接点蚀刻停止层用于形成电阻减少的导电结构。在形成导电结构之后，移除牺牲自对准接点层与牺牲金属接点蚀刻停止层，并置换成低介电常数的材料以减少装置中的电容。如此一来，可改善装置效能。