Method for preparing thin film transistor on corn protein substrate

The invention discloses a method for preparing a thin film transistor on a corn protein substrate, which comprises the following steps: firstly, preparing a semiconductor device on a graphene/copper foil substrate with good heat resistance, then dispensing a solution of a degradable substrate material on the device, and after a solvent is evaporated, stripping a protein substrate film from a copper foil to obtain the thin film transistor on the corn protein substrate. And a degradable p-type transient thin film transistor device can be obtained on the protein thin film. The limitation of the heat resistance of the substrate material on the preparation temperature of the device is overcome, meanwhile, the damage of a solution environment to the protein substrate in the preparation process of the device is avoided, and the performance of the device is improved. 本发明公开了一种在玉米蛋白质基底上制备薄膜晶体管的方法，首先将半导体器件制备于耐热性好的石墨烯/铜箔基底上，然后将可降解基底材料的溶液滴涂于器件之上，待溶剂蒸发后，将蛋白质基底薄膜从铜箔上剥离，即可在蛋白质薄膜上获得可降解的p型瞬态薄膜晶体管器件。本发明克服了基底材料耐热性对器件制备温度的限制，同时，避