Method for manufacturing semiconductor device

The invention relates to a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps: forming a gate dielectric structure above a channel structure; forming one or more work function metal layers of a metal gate over the gate dielectric structure; treating the one or more work function metal layers with a fluorine-containing material; one or more processes are performed to at least partially diffuse fluorine from the fluorine-containing material into the gate dielectric structure. 本公开涉及一种半导体装置的制造方法，包括：在通道结构上方形成栅极介电结构；在栅极介电结构上方形成金属栅极的一个或多个功函数金属层；以含氟材料处理一个或多个功函数金属层；进行一个或多个制程，使氟从含氟材料至少部分扩散至栅极介电结构中。