Junction temperature measuring method, device, equipment, storage medium and program product

The invention relates to a junction temperature measuring method, device and equipment, a storage medium and a program product. The method comprises the following steps: acquiring a load current, a quasi-turn-off current and a reverse recovery current of a chip to be measured; the chip to be measured comprises an insulated gate bipolar transistor (IGBT) chip and a freewheeling diode (FWD) chip; the quasi turn-off current is determined according to the load current; determining the junction temperature of the IGBT chip according to the load current, the quasi turn-off current and a pre-acquired first calibration relation; and determining the junction temperature of the FWD chip according to the load current, the reverse recovery current and a pre-acquired second calibration relation. By adopting the method, the accuracy of junction temperature measurement can be improved. 本申请涉及一种结温测量方法、装置、设备、存储介质和程序产品。该方法包括：获取待测量芯片的负载电流、准关断电流以及反向恢复电流；待测量芯片包括绝缘栅双极型晶体管IGBT芯片和续流二极管FWD芯片；准关断电流根据负载电流确定；根据负载电流、准关断电流和预先获取的第一校准关系确定IGB