Transformer-isolated SiC MOS drive circuit
The invention belongs to the technical field of MOS tube driving, and particularly relates to a transformer-isolated SiC MOS driving circuit which comprises an isolation transformer, a primary winding of the isolation transformer is a control waveform input end, a secondary winding of the isolation...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention belongs to the technical field of MOS tube driving, and particularly relates to a transformer-isolated SiC MOS driving circuit which comprises an isolation transformer, a primary winding of the isolation transformer is a control waveform input end, a secondary winding of the isolation transformer is provided with a center tap, and the center tap is connected with an output terminal S; one of the other two taps of the secondary winding of the isolation transformer is connected with an output terminal G through a first rectifier diode; the last tap of the secondary winding of the isolation transformer is connected with the grid electrode of the low-power discharge SiCMOS tube through a second rectifier diode; the drain electrode of the low-power discharge MOS tube is connected with the output terminal G; a resistor is connected in parallel between the source electrode and the grid electrode of the low-power discharge MOS tube; and a capacitor is connected in parallel between the output terminal G |
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