Silicon-based PIN photodiode manufacturing method and silicon-based PIN photodiode

The invention discloses a silicon-based PIN photodiode manufacturing method and a silicon-based PIN photodiode thereof, and the silicon-based PIN photodiode manufacturing method comprises the following steps: S1, oxidation: oxidizing a silicon-based wafer to form a SiO2 thin film layer; s2, primary photoetching: photoetching a photosensitive area; s3, boron diffusion: doping the photosensitive region and carrying out boron diffusion treatment; s4, LPCVD (Low Pressure Chemical Vapor Deposition): depositing a Si3N4 thin film by adopting LPCVD to form a Si3N4 thin film layer; and S5, secondary photoetching: photoetching a protection ring area. According to the technical scheme of the invention, the responsivity of the photodiode can be improved and the dark current can be reduced, so that the photoelectric property of the silicon-based photodiode is improved, and the continuously improved application requirements are met. 本发明公开了硅基PIN光电二极管制作方法及其硅基PIN光电二极管，其中，硅基PIN光电二极管制作方法，包括以下步骤：S1、氧化：氧化硅基晶圆，形成SiO2薄膜层；S2、一次光刻：光刻