Silicon-based gallium nitride high-voltage product frame and packaging structure and packaging method based on silicon-based gallium nitride high-voltage product frame
The invention discloses a silicon-based gallium nitride high-voltage product frame and a packaging structure and a packaging method based on the silicon-based gallium nitride high-voltage product frame, the silicon-based gallium nitride high-voltage product frame comprises a frame, a plurality of ch...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a silicon-based gallium nitride high-voltage product frame and a packaging structure and a packaging method based on the silicon-based gallium nitride high-voltage product frame, the silicon-based gallium nitride high-voltage product frame comprises a frame, a plurality of chips are placed in a chip placement area on the frame, a non-chip placement area on the frame is provided with a high-reliability structure, and a routing position on the frame is electroplated. And a non-routing position is not electroplated. In the invention, innovation is carried out in the aspects of frame structure design, Wafer wafer thickness reduction design, chip adhesive type selection and the like: when the frame structure design is carried out, electroplating is only carried out on positions needing routing on frame pins and frame base islands, electroplating treatment is not carried out on non-routing positions, and high-reliability structure design is added in a non-chip placement area; according to th |
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