High-performance semiconductor rectification chip and preparation process thereof

The invention discloses a high-performance semiconductor rectification chip and a preparation technology thereof, and relates to the technical field of semiconductor rectification chips, and the preparation technology comprises the steps: carrying out the composite passivation of polycrystalline silicon/silicon nitride/glass, introducing a polycrystalline silicon layer transition layer which has no lattice parameter difference with silicon into a common power diode passivation layer, and taking silicon nitride as a protection layer; a low-concentration deep aluminum doped P +/P-/N-/N + novel structure and an aluminum doped layer with controllable impurity depth are prepared, a new P +/P-/N-/N + type structure is formed, and the width of a PN junction depletion layer is expanded; a reverse fast recovery mechanism and multi-layer doping concentration distribution are adopted; and manufacturing a plurality of P-type buried layers on the intrinsic N layer at the bottom (less than 50 microns) of the anode. Heavy m