System and method for testing reliability degradation of transistor array in radiation environment

The invention aims to solve the problems that the existing transistor reliability test method is mainly suitable for testing a single device, the test period is long, and the test result is inaccurate because the annealing time of the transistor is different in a reliability degradation test in a ra...

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Bibliographische Detailangaben
Hauptverfasser: CHEN WEI, MA WUYING, GOU SHILONG, HE BAOPING, SHENG JIANGKUN, YAO ZHIBIN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention aims to solve the problems that the existing transistor reliability test method is mainly suitable for testing a single device, the test period is long, and the test result is inaccurate because the annealing time of the transistor is different in a reliability degradation test in a radiation environment. The invention provides a system and a method for testing reliability degradation of a transistor array in a radiation environment. The test system comprises a control computer, a semiconductor parameter tester connected with the control computer through a control bus, an electric stress applying device, a matrix switch and a transistor array test clamp used for installing a tested transistor array. The semiconductor parameter tester is used for measuring electrical parameters of the tested transistor array; the electric stress applying equipment is used for providing a required electric stress source for the tested transistor array; each row of the matrix switch is sequentially connected with a