Semiconductor device, forming method thereof and pixel array

A semiconductor device, a method of forming the same, and a pixel array may include a single photon avalanche diode (SPAD) configured for illumination at a back surface of a substrate. The semiconductor device may include a full depth trench isolation (FDTI) structure between the single photon avalanche diode and an adjacent single photon avalanche diode of the semiconductor device. The full depth trench isolation may be associated with isolating the single photon avalanche diode from the adjacent single photon avalanche diode. The full deep trench isolation structure may include a shallow trench isolation (STI) feature at the back surface of the substrate. The full deep trench isolation structure may include a deep trench isolation (STI) feature at a front surface of the substrate. 一种半导体装置及其形成方法以及像素阵列，半导体装置可包括一单光子雪崩二极管(SPAD)，该单光子雪崩二极管经配置用于一基板的一背表面处的照射。该半导体装置可包括该半导体装置的该单光子雪崩二极管与一相邻单光子雪崩二极管之间的一全深沟槽隔离(FDTI)结构。该全深沟槽隔离可与使该单光子雪崩二极管与该相邻单光子雪崩二极管隔离相关联。该全深沟槽隔离结构可包括该基板的该背表面处的一浅沟槽隔离(STI)部件。该全深沟槽隔离结构可包括该基板的一前表面处的一深沟槽隔离(S