SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device and a method of manufacturing the same are described herein. The method includes the steps of patterning a fin in a multi-layer stack and forming an opening in the fin as an initial step of forming a multi-layer source/drain region. An opening is formed into the parasitic channel region of the fin. Once the opening is formed, source/drain barrier material is deposited at the bottom of the opening to a level below the multilayer stack using a bottom-up deposition process. A plurality of layers of source/drain regions are formed on the source/drain barrier material. A stack of nanostructures is formed by removing the sacrificial layer of the multi-layer stack to which the multi-layer source/drain regions are electrically coupled. 本文描述了一种半导体装置及制造此半导体装置的方法。方法包括在多层堆叠中图案化鳍状物及在鳍状物中形成开口的步骤，作为形成多层源极/漏极区域的初始步骤。形成开口进入鳍状物的寄生通道区域中。一旦形成开口，使用自下而上沉积制程在开口底部处沉积源极/漏极阻障材料至多层堆叠下方的位准。在源极/漏极阻障材料上形成多层源极/漏极区域。通过移除多层堆叠的牺牲层来形成纳米结构的堆叠，多层源极/漏极区域电耦合至纳米结构的堆叠。