Wafer bonding system and method thereof

A wafer bonding system and a method thereof, in one embodiment, the wafer bonding system includes a chamber, a gas input aperture and a gas output aperture configured to control a pressure of the chamber in a range of 1 * 10 mbar to 1520 Torr, a first wafer seat having a first surface to support a first wafer, and a second wafer seat having a second surface to support a second wafer, the gas input aperture and the gas output aperture being configured to control a pressure of the chamber in a range of 1 * 10 mbar to 1520 Torr. The second surface is opposite to the first surface, the second wafer seat and the first wafer seat can move relative to each other, the second surface supporting the second wafer is divided into a plurality of areas, and the vacuum pressure of each area is controlled independently of other areas. 一种晶圆接合系统及其方法，在一实施方式中，晶圆接合系统包含腔室、气体输入孔与气体输出孔配置以控制腔室的压力在1×10-2毫巴至1520托的范围内、第一晶圆座具有第一表面，以支撑第一晶圆、与第二晶圆座具有第二表面以支撑第二晶圆，第二表面相对第一表面，第二晶圆座与第一晶圆座可相对彼此移动，其中支撑第二晶圆的第二表面划分为多个区域，其中每一个区域的真空压力独立于其他