Method for adjusting amplification factor of triode

The invention provides a method for adjusting the amplification factor of a triode, and the method comprises the steps: providing a substrate, forming an epitaxial layer on the substrate, and forming an N well and a P well in the epitaxial layer; forming a plurality of isolation parts in the epitaxial layer; forming an emitter region, a base region and a collector region in the epitaxial layer; and depositing a contact hole etching stop layer on the epitaxial layer, and adjusting the amplification factor of the triode by changing the stress of the contact hole etching stop layer. The amplification factor of the triode is adjusted by adjusting the deposition process to change the stress of the contact hole etching stop layer, and the width and the doping concentration of the base region are not changed. 本申请提供一种调整三极管放大倍数的方法，包括：提供一衬底，在衬底上形成外延层，在外延层中形成N阱和P阱；在外延层中形成多个隔离部件；在外延层中形成发射区、基区和集电区；在外延层上沉积接触孔刻蚀停止层，通过改变接触孔刻蚀停止层的应力来调整三极管的放大倍数。通过调整沉积工艺改变接触孔刻蚀停止层的应力的方式对三极管放大倍数进行调整，不改变基区宽度和掺杂浓度。