Plasma etching system and plasma etching method
The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supp...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HONG BOLONG LIAO ZHITENG XIE YICANG ZHENG ZHIQIN TANG YOUXI |
| description | The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring.
一种电浆蚀刻系统以及电浆蚀刻方法，电浆蚀刻系统在一电浆蚀刻腔室中在一晶圆上方产生一电浆。该晶圆由一聚焦环包围。电浆蚀刻系统透过在该聚焦环上方产生一补充电场来拉直该聚焦环上方的一电浆鞘。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN115527827A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN115527827A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN115527827A3</originalsourceid><addsrcrecordid>eNrjZNAPyEkszk1USC1JzsjMS1coriwuSc1VSMxLUShAlclNLcnIT-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGpqZG5hZG5o7GxKgBACICKts</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma etching system and plasma etching method</title><source>esp@cenet</source><creator>HONG BOLONG ; LIAO ZHITENG ; XIE YICANG ; ZHENG ZHIQIN ; TANG YOUXI</creator><creatorcontrib>HONG BOLONG ; LIAO ZHITENG ; XIE YICANG ; ZHENG ZHIQIN ; TANG YOUXI</creatorcontrib><description>The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring.
一种电浆蚀刻系统以及电浆蚀刻方法，电浆蚀刻系统在一电浆蚀刻腔室中在一晶圆上方产生一电浆。该晶圆由一聚焦环包围。电浆蚀刻系统透过在该聚焦环上方产生一补充电场来拉直该聚焦环上方的一电浆鞘。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221227&DB=EPODOC&CC=CN&NR=115527827A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221227&DB=EPODOC&CC=CN&NR=115527827A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HONG BOLONG</creatorcontrib><creatorcontrib>LIAO ZHITENG</creatorcontrib><creatorcontrib>XIE YICANG</creatorcontrib><creatorcontrib>ZHENG ZHIQIN</creatorcontrib><creatorcontrib>TANG YOUXI</creatorcontrib><title>Plasma etching system and plasma etching method</title><description>The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring.
一种电浆蚀刻系统以及电浆蚀刻方法，电浆蚀刻系统在一电浆蚀刻腔室中在一晶圆上方产生一电浆。该晶圆由一聚焦环包围。电浆蚀刻系统透过在该聚焦环上方产生一补充电场来拉直该聚焦环上方的一电浆鞘。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPyEkszk1USC1JzsjMS1coriwuSc1VSMxLUShAlclNLcnIT-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGpqZG5hZG5o7GxKgBACICKts</recordid><startdate>20221227</startdate><enddate>20221227</enddate><creator>HONG BOLONG</creator><creator>LIAO ZHITENG</creator><creator>XIE YICANG</creator><creator>ZHENG ZHIQIN</creator><creator>TANG YOUXI</creator><scope>EVB</scope></search><sort><creationdate>20221227</creationdate><title>Plasma etching system and plasma etching method</title><author>HONG BOLONG ; LIAO ZHITENG ; XIE YICANG ; ZHENG ZHIQIN ; TANG YOUXI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN115527827A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HONG BOLONG</creatorcontrib><creatorcontrib>LIAO ZHITENG</creatorcontrib><creatorcontrib>XIE YICANG</creatorcontrib><creatorcontrib>ZHENG ZHIQIN</creatorcontrib><creatorcontrib>TANG YOUXI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HONG BOLONG</au><au>LIAO ZHITENG</au><au>XIE YICANG</au><au>ZHENG ZHIQIN</au><au>TANG YOUXI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma etching system and plasma etching method</title><date>2022-12-27</date><risdate>2022</risdate><abstract>The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring.
一种电浆蚀刻系统以及电浆蚀刻方法，电浆蚀刻系统在一电浆蚀刻腔室中在一晶圆上方产生一电浆。该晶圆由一聚焦环包围。电浆蚀刻系统透过在该聚焦环上方产生一补充电场来拉直该聚焦环上方的一电浆鞘。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN115527827A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Plasma etching system and plasma etching method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T12%3A49%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HONG%20BOLONG&rft.date=2022-12-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN115527827A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |