Plasma etching system and plasma etching method

The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supp...

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Bibliographische Detailangaben
Hauptverfasser:	HONG BOLONG, LIAO ZHITENG, XIE YICANG, ZHENG ZHIQIN, TANG YOUXI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a plasma etching system and a plasma etching method. The plasma etching system generates a plasma above a wafer in a plasma etching chamber. The wafer is surrounded by a focus ring. The plasma etching system straightens a plasma sheath above the focus ring by generating a supplemental electric field above the focus ring. 一种电浆蚀刻系统以及电浆蚀刻方法，电浆蚀刻系统在一电浆蚀刻腔室中在一晶圆上方产生一电浆。该晶圆由一聚焦环包围。电浆蚀刻系统透过在该聚焦环上方产生一补充电场来拉直该聚焦环上方的一电浆鞘。