Silicon controlled rectifier soaking control method and device and computer readable storage medium
The invention relates to a silicon controlled rectifier soaking control method which comprises the following steps: acquiring a first heating parameter of at least a first silicon controlled rectifier and a second heating parameter of a second silicon controlled rectifier which are connected in para...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a silicon controlled rectifier soaking control method which comprises the following steps: acquiring a first heating parameter of at least a first silicon controlled rectifier and a second heating parameter of a second silicon controlled rectifier which are connected in parallel; respectively comparing the first heating parameter and the second heating parameter with a set threshold value, and adjusting a trigger angle of the first silicon controlled rectifier and/or the second silicon controlled rectifier based on a comparison result; and the step S1 and the step S2 are repeatedly executed until the difference value of the first heating parameter and the second heating parameter is within a set difference value range. According to the invention, the parallel silicon controlled rectifiers do not need to be subjected to current sharing, and the trigger angles of the silicon controlled rectifiers are directly adjusted by comparing heating parameters, so that the soaking problem of the p |
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