Semiconductor manufacturing system and method for generating extreme ultraviolet radiation in manufacturing system thereof

A semiconductor manufacturing system and method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system, in a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system, one or more streams of gas are directed through one or more gas outlets mounted above an edge of a collector mirror of an EUV radiation source, to generate a flow of gas over the surface of the collector mirror. One or more flow rates of one or more streams of gas are adjusted to reduce the amount of metal debris deposited on the surface of the collector mirror. 一种半导体制造系统及在其制造系统中产生极紫外辐射的方法，在一种在半导体制造系统中产生极紫外(EUV)辐射的方法中，气体的一个或多个流被引导通过安装在EUV辐射源的收集器镜的边缘上方的一个或多个气体出口，以在收集器镜的表面上方产生气体的流动。气体的一个或多个流的一个或多个流速被调整以减少沉积在收集器镜的表面上的金属碎屑的量。