Method of forming mask wall for fabricating patterned structure

A method comprising: forming a first mask over a substrate (11); forming one or more masking walls (18) in the openings of the first mask by selective region growth; forming a second mask (14) over the substrate and the shield wall; forming a second material (16) in the openings of the second mask by selective region growth; a layer of deposition material (17) is deposited over the substrate, the masking wall and the portion of the second material by angular deposition, whereby the area masked by the masking wall remains uncoated. In an embodiment, the second material may be a semiconductor and the deposited material may be a superconductor, and the method may be used to form one or more semiconductor-superconductor nanowires for inducing a Margarner zero energy mode as part of a quantum computing device. 一种方法，包括：在衬底(11)上方形成第一掩模；通过选择性区域生长在第一掩模的开口中形成一个或多个遮蔽壁(18)；在衬底和遮蔽壁上方形成第二掩模(14)；通过选择性区域生长在第二掩模的开口中形成第二材料(16)；通过角度沉积在衬底、遮蔽壁和第二材料的部分上方沉积一层沉积材料(17)，由此被遮蔽壁所遮蔽的区域保持不被涂覆。在实施例中，第二材料可以是半导体并且沉积材料可以是超导体，并且该方法可用以形成用于引发马约拉