Semiconductor laser chip and preparation method thereof

The invention discloses a semiconductor laser chip and a preparation method thereof. The semiconductor laser chip comprises an active layer and a functional layer, the active layer is located in the functional layer, and the functional layer comprises a current injection region and a particle doping region located at the end of the current injection region; the functional layer is provided with a groove, and the groove is located between the particle doping region and the current injection region. The semiconductor laser chip provided by the invention is simple in preparation process and high in process stability, and the semiconductor laser chip has a relatively high COD (Chemical Oxygen Demand) threshold value. 本申请公开了一种半导体激光器芯片及其制备方法。该半导体激光器芯片包括：有源层和功能层，有源层位于功能层中，功能层包括电流注入区和位于电流注入区端部的粒子掺杂区；功能层上设置有沟槽，沟槽位于粒子掺杂区和电流注入区之间。本申请的半导体激光器芯片制备工艺简单，工艺稳定性高，且使半导体激光器芯片具有较高的COD阈值。