Integrated circuit, semiconductor structure and forming method thereof

An integrated circuit (IC) and a method of forming the same are provided. The integrated circuit includes a substrate; the conductive layer is configured on the substrate; the barrier layer is disposed on the conductive layer. An etch stop layer covering sidewalls of the barrier layer and extending over a first portion of a top surface of the barrier layer; and at least one capacitor structure disposed on the second portion of the top surface of the barrier layer. 提供了一种集成电路(IC)及其形成方法。该集成电路包括衬底；导电层配置在衬底上；阻障层配置在导电层上；刻蚀停止层覆盖阻障层的侧壁且在阻障层的顶面的第一部分上延伸；以及至少一电容器结构配置在阻障层的顶面的第二部分上。