LVTSCR device structure for ESD protection and manufacturing method thereof

The invention provides a preparation method of an LVTSCR structure. The preparation method is applied to a low-voltage ESD device. According to the manufacturing method of the LVTSCR device provided by the invention, on the basis of a conventional LVTSCR device structure, a P-type heavily doped ion region and an N-type heavily doped ion region which are parallel and are separated by a preset adjustable distance are respectively formed in a junction region of a P-type deep trap and an N-type deep trap which are adjacent to each other of the device; according to the LVTSCR device, the heavily doped ion regions with different ion types are formed on the surface of the semiconductor substrate, the barrier layer SB is formed on the surface of the semiconductor substrate corresponding to the heavily doped ion regions with different ion types, and the increased charge space regions between the heavily doped ion regions with different ion types can be changed by adjusting the width of the preset adjustable interval,