Semiconductor device including conductive bumps to improve EMI/RFI shielding

A semiconductor device has a shield to prevent transmission and/or reception of EMI and/or RFI radiation. The semiconductor device includes a substrate including ground contact pads around a periphery of the substrate, the ground contact pads being exposed at one or more edges of the substrate. A bump made of gold or other non-oxidized conductive material may be formed on the contact pad, such as removing the oxide layer between the contact pad and the conductive bump using ultrasonic welding. The conductive bump is electrically coupled to a conductive coating applied around the periphery of the semiconductor device. 一种半导体装置具有屏蔽以防止EMI和/或RFI辐射的传输和/或接收。所述半导体装置包括衬底，所述衬底包含所述衬底的外围周围的接地接触垫，所述接地接触垫暴露在所述衬底的一个或多个边缘处。可在所述接触垫上形成由金或其它非氧化导电材料制成的凸块，例如使用超声波焊接去除所述接触垫与所述导电凸块之间的氧化层。所述导电凸块电耦合到施加在所述半导体装置的所述外围周围的导电涂层。