Method for filling and leveling up groove in surface of silicon wafer

The invention provides a silicon wafer surface groove filling and leveling method, which comprises the following steps of S1, depositing a barrier layer on a silicon wafer through a chemical vapor deposition method; s2, depositing a filling layer on the silicon wafer; s3, a chemical mechanical grind...

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Bibliographische Detailangaben
Hauptverfasser: YE WUYANG, LI TIANCHENG, LIU JIAJING, SUN XUAN, LIU YAOCONG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a silicon wafer surface groove filling and leveling method, which comprises the following steps of S1, depositing a barrier layer on a silicon wafer through a chemical vapor deposition method; s2, depositing a filling layer on the silicon wafer; s3, a chemical mechanical grinding method is adopted, the grinding temperature is controlled to range from 30 DEG C to 40 DEG C, polishing and grinding are conducted on the filling layer, except for the interior of the groove, on the surface of the silicon wafer through grinding liquid, and the silicon wafer is protected through the barrier layer; s4, continuously repeating the step S2 and the step S3 until the interior of the groove is filled with the barrier layer and the filling layer; and S5, removing the barrier layer and the redundant filling layer by adopting dry etching. By adopting the grinding liquid with a high selection ratio, when the groove is filled, the limitation of the size of the wafer is avoided, and the uniformity of the cen