Preparation method of MEMS probe for wafer-level test

The invention discloses a preparation method of an MEMS probe for wafer-level testing, and the method comprises the steps: preparing a probe body through a micro-casting technology, depositing an insulating isolation layer on the surface of the probe body, and preparing a shielding metal layer on the surface of the insulating isolation layer, thereby completing the preparation of the probe. Due to the good micromachining capacity of the MEMS technology, the probe which is good in consistency, high in precision, high in anti-interference capacity and suitable for high-needle-number parallel testing can be prepared through the technical scheme. 本发明公开了一种晶圆级测试用MEMS探针制备方法，采用微铸造工艺制备探针本体，之后在探针本体表面沉积绝缘隔离层，在绝缘隔离层表面制备屏蔽金属层来完成探针的制备。由于MEMS技术的良好微细加工能力，采用本技术方案可制备一致性好、精度高、抗干扰能力强的，适用于高针数并列测试的探针。