Method for preparing oxygen-doped O-Ti3C2Tx two-dimensional material

The invention discloses a method for preparing an oxygen-doped O-Ti3C2Tx two-dimensional material, and relates to the field of nanometer two-dimensional materials.The method comprises the steps that a precursor material Ti3AlC2 is pre-oxidized for a period of time at a specific temperature, and then...

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Hauptverfasser: ZHANG HONGSHENG, ZHANG HUA, XIANG WEI, XIE SHIKUI, ZHU WENBIN, CAO XIN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a method for preparing an oxygen-doped O-Ti3C2Tx two-dimensional material, and relates to the field of nanometer two-dimensional materials.The method comprises the steps that a precursor material Ti3AlC2 is pre-oxidized for a period of time at a specific temperature, and then the oxygen-doped O-Ti3C2Tx two-dimensional material is prepared through etching in the chemical environment of LiF/HCl or HF + HCl + LiCl. And the doping of oxygen is also realized. Besides, the method is simple, the synthesis process is controllable, the synthesis method for preparing the doped and modified Ti3C2Tx two-dimensional material is enriched, and the synthesized oxygen-doped O-Ti3C2Tx two-dimensional material can be applied to multiple fields of energy storage, catalysis and the like. 本发明公开了一种制备氧掺杂O-Ti3C2Tx二维材料的方法,涉及纳米二维材料制备领域,将前驱体材料Ti3AlC2首先在特定的温度段预氧化一段时间,然后在LiF/HCl或者HF+HCl+LiCl的化学环境下刻蚀制备氧掺杂O-Ti3C2Tx二维材料,该法不仅保留了Ti3C2Tx的晶体结构和微观结构特征,而且还实现了氧的掺杂。另外,该法简单,合成工艺可控,丰富了制备掺杂改性Ti3C2Tx二维材料的合成方法,所合成的氧掺杂O-Ti3C2Tx二维材料