Semi-conductive liquid filling method for repairing ablation of semi-conductive buffer layer of high-voltage cable

The invention relates to a semiconductive liquid filling method for repairing ablation of a semiconductive buffer layer of a high-voltage cable, and the method comprises the following steps: respectively forming an injection hole and an exhaust hole at two ends of the high-voltage cable to be repair...

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Hauptverfasser: LIN ZHIMIN, ZHANG SHILIAN, SUN ZHIHONG, QIANG WEI, ZHU TING, XU HONGBIN, WU TONG, LUO CHEN, ZENG LIN, YAN YOUXIANG, FU CHIH-WEI, CAI JUNYU, CHEN HONG, LIM, JEE-WOONG, LUO WANGBIN, XIE WEI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a semiconductive liquid filling method for repairing ablation of a semiconductive buffer layer of a high-voltage cable, and the method comprises the following steps: respectively forming an injection hole and an exhaust hole at two ends of the high-voltage cable to be repaired, the injection hole facing downwards, and the exhaust hole facing upwards; injecting the semi-conductive liquid into the high-voltage cable from the injection hole, and when the semi-conductive liquid flows out of the exhaust hole and then converges into a container below, continuously keeping injection for a preset time and then stopping injection; sealing an injection hole and an exhaust hole of the high-voltage cable; rotating the high-voltage cable in the same direction along the central axis, and sequentially rotating the high-voltage cable for a preset angle according to preset time intervals until the high-voltage cable rotates for a circle; nitrogen is continuously injected from the exhaust hole until no