TMV and Fanout-based integrated power module and preparation method thereof

The invention relates to the technical field of semiconductor packaging, in particular to an integrated power module based on TMV and Fanout and a preparation method thereof, and the integrated power module comprises a drive circuit and a DCB power circuit which are integrated up and down; the DCB power circuit comprises a ceramic-based copper-clad plate, a semiconductor power device and a passive device which are bonded on the uppermost layer of the ceramic-based copper-clad plate, a metal hole extending from the top of the DCB power plastic package body to the uppermost layer of the ceramic-based copper-clad plate and the top of the semiconductor power device, and a metallization layer arranged on the top of the DCB power plastic package body; creepage grooves are etched in the peripheral edges of the uppermost layer and the lowermost layer of the ceramic-based copper-clad plate, so that a preset creepage distance is met between the uppermost layer and the lowermost layer of the ceramic-based copper-clad pl