Method and system for depositing thin films

A thin film deposition system includes a top plate over a wafer and configured to generate a plasma during a thin film deposition process. The system includes a gap sensor configured to generate a sensor signal representative of a gap between the wafer and the top plate. The system includes a contro...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHEN SHENGZHAO, LI SHENGZHAN, CAI ZHENGYUAN, ZHOU ZHENGXIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A thin film deposition system includes a top plate over a wafer and configured to generate a plasma during a thin film deposition process. The system includes a gap sensor configured to generate a sensor signal representative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap in response to a sensor signal during the thin film deposition process. 一种薄膜沉积系统包括位于晶片上方且配置成在薄膜沉积工艺期间产生等离子体的顶板。所述系统包括配置成生成表示位于晶片及顶板之间的间隙的传感器信号的间隙传感器。所述系统包括配置成在薄膜沉积工艺期间响应传感器信号来调整间隙的控制系统。