Charging method for remelting ultrathin silicon wafer

The invention discloses a charging method for remelting an ultrathin silicon wafer, which comprises the following steps: stirring 10-20kg of crushed ultrathin silicon wafer and 40-50kg of conventional remelting material in a polytetrafluoroethylene box, uniformly mixing, and adding into a charging barrel; then 10-20 kg of conventional compound feed is added to the upper portion of the raw material; repeating the steps, sequentially adding the first barrel material, the second barrel material, the third barrel material,..., and the (n-1) th barrel material, and adding a conventional compound material into the nth barrel material, so that the sum of all the material adding amounts in the first barrel material to the nth barrel material is equal to the total material adding amount to be loaded; the argon flow during feeding is increased to 130-150slpm, the frequency of a dry pump is adjusted to 100%, the feeding interval time is shortened to 35-50min, and the material melting power of the single crystal furnace