Gallium nitride chemical mechanical polishing solution based on redox potential mechanism

The invention relates to the technical field of gallium nitride chemical-mechanical polishing liquid, in particular to the technical field of chemical action of an oxidation-reduction potential mechanism, which comprises the following steps: S1, adding an oxidation-reduction potential regulator with the mass percent of m1 into pure water; s2, grinding particles with the mass percent of m2 are added, and anhydrous ethylenediamine with the mass percent of m3 is slowly added; and S3, the PH value of the polishing solution is adjusted through hydrofluoric acid and glutamic acid. 本发明涉及一种氮化镓化学机械抛光液技术领域，尤其涉及氧化还原电位机理的化学作用技术领域，包括如下步骤：步骤S1：纯水中加入质量百分比m1的氧化还原电位调节剂；步骤S2：加入质量百分比m2的研磨颗粒，并缓慢加入质量百分比为m3的无水乙二胺；步骤S3：用氢氟酸和谷氨酸调节抛光液PH值。