Preparation method of ultra-pure GeCl4
The invention relates to a preparation method of ultra-pure GeCl4. According to the preparation method of the ultra-pure GeCl4 provided by the invention, the carbon film is plated in the high-purity quartz tube, the carbon film is obtained by ionizing the high-purity hydrocarbon in the plasma, and t...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a preparation method of ultra-pure GeCl4. According to the preparation method of the ultra-pure GeCl4 provided by the invention, the carbon film is plated in the high-purity quartz tube, the carbon film is obtained by ionizing the high-purity hydrocarbon in the plasma, and the carbon film is of a diamond-like carbon structure and has the characteristics of high purity, high hardness, high elastic modulus, high melting point, chemical inertness, firm combination with the matrix quartz tube and the like; the method comprises the following steps: placing a zone-melting germanium ingot in a quartz tube plated with a carbon film, introducing high-purity Cl2 into the quartz tube, heating the metal germanium ingot in the tube through a high-frequency induction coil outside the quartz tube, introducing Cl2 after the temperature of the zone-melting germanium ingot reaches 630 DEG C or above, and heating the metal germanium ingot in the tube through a high-frequency induction coil after the tem |
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