Self-biased split insulated gate bipolar transistor and manufacturing method thereof

The invention belongs to the technical field of power semiconductor devices, and relates to a self-biased split insulated gate bipolar transistor and a manufacturing method thereof. The bias potential is provided for the separation gate (11) through the potential of the floating P region (18), so that the electron accumulation capability below the groove is formed, the conductivity modulation capability is enhanced, and the forward conduction capability of the device is enhanced. Compared with a traditional separation gate structure, a diode of a self-biased structure and a capacitor structure are integrated into an IGBT structure, the conduction capability and the switching performance of a device can be improved at the same time under the condition that the size of the device and the work of the IGBT are hardly influenced, the negative influence caused by the separation gate is eliminated, the switching loss is improved, the switching speed is increased, and the switching efficiency is improved. And the for