Semiconductor structure, manufacturing method thereof and memory system

The embodiment of the invention discloses a semiconductor structure, a manufacturing method of the semiconductor structure and a memory system. A plurality of active columns extending in the first direction, gate structures located on one sides of the active columns, first insulating layers located between every two adjacent active columns, and first electrodes arranged at the ends, in the first direction, of the active columns are arranged in the semiconductor layer; the first direction is the thickness direction of the semiconductor layer; the second insulating layer is positioned on the semiconductor layer; a plurality of connecting structures, wherein each connecting structure is at least partially located in the second insulating layer; the connecting structure is connected with the first electrode, and the width of the connecting structure in the second direction is larger than that of the first electrode in the second direction; the second direction is perpendicular to the first direction. 本公开实施例公开了一种半