Semiconductor structure and manufacturing method thereof

The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The invention provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes: at least one two-dimensional (2D) conductive structure; a dielectric...

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Bibliographische Detailangaben
Hauptverfasser: LI MINGHAN, YANG SHIYI, LU MENGPEI, ZHAN YOUCHEN, LI SHUWEI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof. The invention provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes: at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, where the interconnect structure is laterally connected to at least one edge of the 2D conductive structure. 本发明实施例涉及半导体结构及其制造方法。本公开提供一种半导体结构及制造半导体结构的方法。所述半导体结构包括:至少一个二维2D导电结构;电介质层,其放置于所述2D导电结构上;及至少一个互连结构,其放置于所述电介质层中且延伸到所述2D导电结构中,其中所述互连结构横向连接到所述2D导电结构的至少一个边缘。