Feeding method for effectively inhibiting silicon splashing and silicon jumping of particle silicon

The invention discloses a charging method for effectively inhibiting silicon splashing and silicon jumping of particle silicon, which comprises the step of adjusting a particle silicon charging mode and a field process, and the adjustment of the particle silicon charging mode comprises the adjustmen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG YAPU, WANG JUNLEI, WANG YICHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!