Feeding method for effectively inhibiting silicon splashing and silicon jumping of particle silicon

The invention discloses a charging method for effectively inhibiting silicon splashing and silicon jumping of particle silicon, which comprises the step of adjusting a particle silicon charging mode and a field process, and the adjustment of the particle silicon charging mode comprises the adjustment of a particle silicon input stage and the adjustment of the charging position of the particle silicon in a charging barrel. The field process adjustment comprises argon flow and dry pump frequency adjustment, feeding crucible position adjustment, feeding interval time control and heater power adjustment. The method has the advantages that the phenomena of silicon splashing and silicon skipping in the use process of the granular silicon are effectively avoided, the probability of line breaking in single crystal growth is reduced, and the yield of a single crystal silicon rod is improved. 本发明公开了一种有效抑制颗粒硅溅硅跳硅的加料方法，包括对颗粒硅装料方式及现场工艺进行调整，颗粒硅装料方式的调整包括颗粒硅投入阶段的调整及颗粒硅在料筒中加料位置的调整，现场工艺调整包括氩气流量及干泵频率调整、加料埚位调整、加料间隔时间控制和加热器功率调整。本