Etching method and etching apparatus

In an etching method for etching a surface by supplying an etching gas to a substrate, the following steps are performed: a protection step of supplying an amine gas to the substrate provided with an oxygen-containing silicon film to form a protection film for preventing etching by the etching gas on the surface of the oxygen-containing silicon film for protection; and a first etching step of etching the oxygen-containing silicon film by supplying the amine gas and a first etching gas, which is one of the etching gases, to the substrate, the first etching gas being a fluorine-containing gas. 在向基板供给蚀刻气体来对表面进行蚀刻的蚀刻方法中，实施以下工序：保护工序，向设置有含有氧的硅膜的所述基板供给胺气，来在所述含有氧的硅膜的表面形成用于防止被所述蚀刻气体蚀刻的保护膜以进行保护；以及第一蚀刻工序，向所述基板供给所述胺气以及作为所述蚀刻气体之一的第一蚀刻气体，来对所述含有氧的硅膜进行蚀刻，其中，所述第一蚀刻气体是含氟气体。