Silicon nanowire gyroscope based on grid regulation and control and processing method thereof

The invention relates to a silicon nanowire gyroscope based on grid regulation and control and a processing method thereof. The silicon nanowire gyroscope comprises an SOI silicon wafer, and a silicon nitride film is arranged on the top silicon surface of the SOI silicon wafer; wherein a suspended m...

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Bibliographische Detailangaben
Hauptverfasser: JIANG DISHA, YANG XUN, LIU CHAORAN, GUO LIKANG, ZHENG CHILIN, DONG LINXI, WANG GAOFENG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a silicon nanowire gyroscope based on grid regulation and control and a processing method thereof. The silicon nanowire gyroscope comprises an SOI silicon wafer, and a silicon nitride film is arranged on the top silicon surface of the SOI silicon wafer; wherein a suspended mass block and three silicon nanowires connected with the mass block are formed on the top silicon layer, and the silicon nanowires are distributed along the peripheral side of the mass block; silicon nitride films are attached to the surfaces of the mass block and the silicon nanowires; a positive electrode and a negative electrode which are conductively connected with the bulk silicon are arranged on the top-layer silicon; the SOI silicon wafer is also provided with an isolation channel which is etched from the silicon nitride thin film to the oxide layer so as to realize physical isolation of the positive electrode and the negative electrode; the suspended silicon nitride film is provided with a grid electrode, a