Method for manufacturing semiconductor element

In this method for manufacturing a semiconductor element, a first semiconductor section (SL1) has a protruding section (TS) protruding toward a base substrate (UK), the protruding section contains a nitride semiconductor, the protruding section is bonded to the base substrate, a semiconductor substr...

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Bibliographische Detailangaben
1. Verfasser:	NISHIMURA TAKEHIRO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	In this method for manufacturing a semiconductor element, a first semiconductor section (SL1) has a protruding section (TS) protruding toward a base substrate (UK), the protruding section contains a nitride semiconductor, the protruding section is bonded to the base substrate, a semiconductor substrate (HK) has a hollow section (TK) located between the base substrate and the first semiconductor section, the hollow section is in contact with a side surface of the protruding section, and the hollow section is in contact with the side surface of the protruding section. The projection (TS) is irradiated with laser light (LZ) before the first semiconductor part is separated from the semiconductor substrate. 在本发明的半导体元件的制造方法中，第一半导体部(SL1)具有朝向衬底基板(UK)突出的凸部(TS)，凸部包含氮化物半导体，凸部与衬底基板接合，半导体基板(HK)具有位于衬底基板与第一半导体部间的中空部(TK)，中空部与凸部的侧面相接，且与半导体基板的外部相通，在将第一半导体部从半导体基板分离之前，进行激光(LZ)向凸部(TS)的照射。