Semiconductor device structure and forming method

The invention discloses a semiconductor device structure and a forming method. The invention relates to an integrated chip structure. The integrated chip structure includes a first chiplet predominantly having a first plurality of integrated chip devices coupled to a first plurality of interconnects over a first substrate. The first plurality of integrated chip devices is a first type of integrated chip devices. The integrated chip structure also includes a second chiplet predominantly having a second plurality of integrated chip devices coupled to a second plurality of interconnects over a second substrate. The second plurality of integrated chip devices is a second type of integrated chip devices different from the first type of integrated chip devices. One or more inter-chiplet connectors are located between the first chiplet and the second chiplet and are configured to electrically couple the first chiplet and the second chiplet. 本申请公开了半导体器件结构及形成方法。本公开涉及集成芯片结构。集成芯片结构包括第一小芯片，第一小芯片占主导性地具有耦合到在第一衬底之上的第一多个互连的第