Process method for improving MTP programming capability

The invention provides a process method for improving MTP programming capability, which comprises the following steps of: providing a substrate with an MTP unit region and an NMOS (N-channel Metal Oxide Semiconductor) region, and forming a grid electrode on the surface of the substrate; covering the NMOS region with a first mask layer, performing ion implantation on the MTP unit region to form an MTP implantation region and an MTP source and drain region, and removing the first mask layer; forming side walls on the two sides of the grid electrode; and covering the MTP unit region with a second mask layer, and carrying out ion implantation on the NMOS region to form an LDD oblique injection region and an NMOS source-drain region. According to the process method, only twice masking and twice photoetching are adopted, so that the process flow is relatively simplified, the cost is reduced, mask protection is carried out on the MTP unit region during LDD oblique injection, the influence of LDD oblique injection on