Method for growing semi-insulating iron-doped InP epitaxial layer

The invention discloses a method for growing a semi-insulating iron-doped InP epitaxial layer. The method comprises the following steps: acquiring the resistance of any mth test structure from a first test structure to an Mth test structure; obtaining the resistance of the (k-1) th iron-doped InP te...

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Hauptverfasser:	WANG JUN, TAN SHAOYANG, CHENG YANG, FANG YANHAN, ZHAO WU, GUO YINTAO, XIA MINGYUE, LIAO XINSHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a method for growing a semi-insulating iron-doped InP epitaxial layer. The method comprises the following steps: acquiring the resistance of any mth test structure from a first test structure to an Mth test structure; obtaining the resistance of the (k-1) th iron-doped InP test layer according to the resistance of the kth test structure and the resistance of the (k-1) th test structure; acquiring a first function relationship between the resistance rk-1 of any (k-1) th iron-doped InP test layer from the first iron-doped InP test layer to the (M-1) th iron-doped InP test layer and the flow of the Fe source; obtaining a peak value region corresponding to resistors from the first iron-doped InP test layer to the (M-1) th iron-doped InP test layer in the first function relationship as a first characteristic resistor; obtaining the average value of the flow range of the Fe source corresponding to the first characteristic resistor in the first function relation as the first characteristic Fe