Method for preparing gas sensor from In2O3/In2S3 hydrangea-shaped nano material
The invention discloses a method for preparing a gas sensor from an In2O3/In2S3 hydrangea-shaped nano material, and relates to a method for preparing a gas sensor, in particular to an In2O3/In2S3 hydrangea-shaped structure sensing material for trimethylamine detection, a preparation method of the se...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for preparing a gas sensor from an In2O3/In2S3 hydrangea-shaped nano material, and relates to a method for preparing a gas sensor, in particular to an In2O3/In2S3 hydrangea-shaped structure sensing material for trimethylamine detection, a preparation method of the sensing material and a trimethylamine gas sensor. The In2O3/In2S3 hydrangea-shaped structure material is prepared by combining a one-step hydrothermal method with a subsequent calcining process, and the material is loose and porous in surface, has a relatively high specific surface area and a large number of active sites, and shows excellent detection characteristics on trimethylamine gas. The sensor manufactured by the invention is small in size, low in cost, high in sensitivity to trimethylamine gas at low temperature, good in selectivity and long-term stability, ultralow in detection limit and fast in response, and has a wide application prospect in the aspect of on-site immediate on-line detection of trimethylami |
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