Process for ashing organic materials from substrates

本发明涉及从基片上灰化有机膜的方法，灰化采用一种含气体或气体混合物的等离子体进行，该气体或气体混合物是选自(a)仅是三氧化硫；(b)三氧化硫加一种辅助性气体；和(c)三氧化硫加至少两种辅助性气体。下列任一种气体均可用作辅助性气体：水蒸气、臭氧、氢、氮、氮氧化物或卤化物如四氟甲烷、氯、三氟化氮、六氟乙烷或甲基三氟化物。 Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or gas mixture selected from the following groups: (a) sulfur trioxide alone; (2) sulfur trioxide plus one supplemental gas; and (3) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane, or methyltrifluoride.