Preparation method of pure platinum barrier Schottky diode

A preparation method of a pure platinum barrier Schottky diode comprises the following steps: firstly, depositing a layer of platinum metal on a large molybdenum disk, then placing a silicon wafer on the large molybdenum disk, bombarding the surface of the silicon wafer through high-purity argon ions, removing a natural oxide layer on the surface of the silicon wafer, and bombarding the large disk outside the silicon wafer through the argon ions at the same time; platinum metal on the large disc is bombarded and then deposited on the surface of the silicon wafer; and depositing a TiW layer on the surface of the platinum layer of the silicon wafer. Preparing a pure platinum barrier Schottky diode after depositing a TiW layer silicon wafer, wherein an n + monocrystalline silicon substrate is used as a substrate slice; generating an n-epitaxial layer on the n + monocrystalline silicon substrate; region-by-region oxidation and ion implantation are carried out to form a PN junction, and field oxidation is carried