Semiconductor device including RC-IGBT

The invention relates to a semiconductor device including an RC-IGBT. A semiconductor device (100) is presented. In one embodiment, a semiconductor device includes a semiconductor substrate (102) including an RC-IGBT having a diode region (106). The diode region (106) includes a p-doped anode region (112) and an n-doped emitter efficiency adjustment region (114). At least one of the anode region (112) or the n-doped emitter efficiency adjustment region (114) includes a deep level dopant (1181, 1182). 本发明涉及包括RC-IGBT的半导体器件。提出一种半导体器件（100）。半导体器件包括半导体衬底（102），该半导体衬底（102）包括具有二极管区域（106）的RC-IGBT。二极管区域（106）包括p掺杂阳极区（112）和n掺杂发射极效率调节区（114）。阳极区（112）或n掺杂发射极效率调节区（114）中的至少一个包括深能级掺杂剂（1181、1182）。