Non-volatile memory and method for performing erase operation on memory

The invention discloses a non-volatile memory and a method for performing erase operation on the memory, and the non-volatile memory comprises a plurality of memory units; a plurality of word lines for operating the plurality of memory cells, the plurality of word lines being divided into a plurality of erase groups, each of which applies the same voltage when performing an erase operation; the word lines of one erasure group and the word lines of the other erasure group are arranged at intervals in a staggered mode. According to the invention, the problem of over-erasing when data in the memory is erased can be avoided, the reliability of the memory is improved, and the service life of the memory is prolonged. 一种非挥发存储器及存储器上进行擦除操作的方法，其中，所述非挥发存储器包括：多个存储单元；多条字线，用于操作多个存储单元，该多条字线被划分为多个擦除群组，每个擦除群组在进行擦除操作时施加相同的电压；一个擦除群组的字线与另一个或多个其他擦除群组的字线间隔交错排列。利用本发明，可以避免对存储器中数据进行擦除时出现过擦问题，提高存储器的可靠性和使用寿命。